TSS42L RWG

Obsolete

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 200A 1005

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 200A 1005

Technical Specifications

Parameters and characteristics for this part

Specification	TSS42L RWG

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	500 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	1005 (2512 Metric)
Reverse Recovery Time (trr)	5 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	1005
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	650 mV

Part	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Current - Average Rectified (Io)	Capacitance @ Vr, F	Package / Case	Package / Case	Speed	Speed	Technology	Current - Reverse Leakage @ Vr	Supplier Device Package	Reverse Recovery Time (trr)
Taiwan Semiconductor Corporation TSS42U RGG	1 V	30 V	-55 °C	125 °C	Surface Mount	200 mA	10 pF	0603 Metric	0201	Any Speed	200 mA	Schottky	500 nA
Taiwan Semiconductor Corporation TSS42L RWG	650 mV	30 V	-55 °C	125 °C	Surface Mount	200 mA	10 pF		1005 (2512 Metric)	Any Speed	200 mA	Schottky	500 nA	1005	5 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 30 V 200mA Surface Mount 1005

Technical documentation and resources

No documents available