ZXM61P02FTA

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	ZXM61P02FTA

Current - Continuous Drain (Id) @ 25°C	900 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.7 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	625 mW
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

P-Channel Enhancement Mode MOSFET

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
Diodes Inc ZXM61P02FTA	Surface Mount	900 mA	4.5 V	2.7 V	1.5 V	-55 °C	150 °C	P-Channel	600 mOhm	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	SOT-23-3	12 V	20 V	150 pF	625 mW

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General part information

P-Channel Enhancement Mode MOSFET

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