DMP6250SEQ-13

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Diodes Inc

60V P-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

60V P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMP6250SEQ-13

Current - Continuous Drain (Id) @ 25°C	6.1 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	9.7 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	551 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	14 W, 1.8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	SOT-223-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

60V P-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Qualification	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Grade	Technology	FET Type
Diodes Inc DMP6250SEQ-13	SOT-223-3	3 V	6.1 A	60 V	TO-261-4 TO-261AA	4.5 V 10 V	Surface Mount	1.8 W 14 W	250 mOhm	-55 °C	150 °C	9.7 nC	AEC-Q101	20 V	551 pF	Automotive	MOSFET (Metal Oxide)	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This MOSFET is designed to meet the stringent requirements ofAutomotive applications. It is qualified to AEC-Q101 and supported by aPPAP.

Technical documentation and resources