Specification	HN3C51F-GR(TE85L,F

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	200
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
NPN Count	2
Operating Temperature	150 °C
Package / Case	SC-74, SOT-457
Package Name	SM6
Power - Max	300 mW
Transistor Configuration	Dual
Transistor Type	NPN
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	120 V

HN3C51 Series

Part	NPN Count	Transistor Type	Transistor Configuration	Package Name	Current - Collector (Ic) (Max)	Operating Temperature	Current - Collector Cutoff (Max)	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Package / Case	DC Current Gain (hFE) (Min)	Mounting Type	Vce Saturation (Max)	Power - Max
Toshiba Semiconductor and Storage HN3C51F-GR(TE85L,F	2	NPN	Dual	SM6	0.1 mA	150 °C	100 nA	120 V	100 MHz	SC-74 SOT-457	200	Surface Mount	300 mV	300 mW
Toshiba Semiconductor and Storage HN3C51F-BL(TE85L,F	2	NPN	Dual	SM6	0.1 mA	150 °C	100 nA	120 V	100 MHz	SC-74 SOT-457	350	Surface Mount	300 mV	300 mW

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