HN3C51F-GR(TE85L,F

Obsolete

Toshiba Semiconductor and Storage

TRANS 2NPN DUAL 120V 100MA SM6

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Obsolete

Toshiba Semiconductor and Storage

TRANS 2NPN DUAL 120V 100MA SM6

Technical Specifications

Parameters and characteristics for this part

Specification	HN3C51F-GR(TE85L,F

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-74, SOT-457
Power - Max [Max]	300 mW
Supplier Device Package	SM6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max)	120 V

Part	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector (Ic) (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Toshiba Semiconductor and Storage HN3C51F-GR(TE85L,F	150 °C	300 mV	300 mW	100 MHz	120 V	Surface Mount	100 mA	2 NPN (Dual)	200 hFE	SM6	100 nA	SC-74 SOT-457
Toshiba Semiconductor and Storage HN3C51F-BL(TE85L,F	150 °C	300 mV	300 mW	100 MHz	120 V	Surface Mount	100 mA	2 NPN (Dual)		SM6	100 nA	SC-74 SOT-457	350 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 100mA 100MHz 300mW Surface Mount SM6

Technical documentation and resources