DMP2160UFDBQ-7

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Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

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Active

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Technical Specifications

Parameters and characteristics for this part

Specification	DMP2160UFDBQ-7

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	6.5 nC
Input Capacitance (Ciss) (Max) @ Vds	536 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	U-DFN2020-6 (Type B)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	900 mV

NRND = Not Recommended for New Design

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Power - Max [Max]
Diodes Inc DMP2160UFDB-7R
Diodes Inc DMP2160UW-7	-55 °C	150 °C	SC-70 SOT-323	MOSFET (Metal Oxide)	100 mOhm	1.8 V 4.5 V	P-Channel	Surface Mount	1.5 A	12 V	627 pF	20 V	SOT-323	350 mW	900 mV
Diodes Inc DMP2160U-7	-55 °C	150 °C	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)		1.8 V 4.5 V	P-Channel	Surface Mount	3.2 A	12 V	627 pF	20 V	SOT-23-3		900 mV	1.4 W	80 mOhm
Diodes Inc DMP2160UFDBQ-7	-55 °C	150 °C	6-UDFN Exposed Pad	MOSFET (Metal Oxide)				Surface Mount	3.8 A		536 pF	20 V	U-DFN2020-6 (Type B)		900 mV		70 mOhm	6.5 nC	2 P-Channel	1.4 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NRND = Not Recommended for New Design

Technical documentation and resources