BCX70KE6327HTSA1

Infineon Technologies

TRANSISTOR, BIPOL, NPN, 45V, SOT-23-3

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Infineon Technologies

TRANSISTOR, BIPOL, NPN, 45V, SOT-23-3

Technical Specifications

Parameters and characteristics for this part

Specification	BCX70KE6327HTSA1

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	380
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	330 mW
Supplier Device Package	PG-SOT23
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	550 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

Part	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Power - Max [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Transistor Type
Infineon Technologies BCX70KE6327HTSA1	250 MHz	380	SC-59 SOT-23-3 TO-236-3	330 mW	Surface Mount	100 mA	PG-SOT23	45 V	550 mV	150 °C	20 nA	NPN
Infineon Technologies BCX70JE6433HTMA1	250 MHz	250	SC-59 SOT-23-3 TO-236-3	330 mW	Surface Mount	100 mA	PG-SOT23	45 V	550 mV	150 °C	20 nA	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 45 V 100 mA 250MHz 330 mW Surface Mount PG-SOT23

Technical documentation and resources