IPU80R750P7AKMA1

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Infineon Technologies

MOSFET N-CH 800V 7A TO251-3

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LTB

Infineon Technologies

MOSFET N-CH 800V 7A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPU80R750P7AKMA1

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	460 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	51 W
Rds On (Max) @ Id, Vgs [Max]	750 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPU80R750P7AKMA1	750 mOhm	800 V	IPAK TO-251-3 Short Leads TO-251AA	51 W	20 V	7 A	17 nC	PG-TO251-3	N-Channel	Through Hole	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	3.5 V	460 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 7A (Tc) 51W (Tc) Through Hole PG-TO251-3

Technical documentation and resources