GE12160CEA3

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GE Aerospace

SIC 2N-CH 1200V 1.425KA MODUL

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GE Aerospace

SIC 2N-CH 1200V 1.425KA MODUL

Technical Specifications

Parameters and characteristics for this part

Specification	GE12160CEA3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	1.425 kA
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	3744 nC
Input Capacitance (Ciss) (Max) @ Vds	90000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	Module
Power - Max [Max]	3.75 kW
Rds On (Max) @ Id, Vgs	1.5 mOhm
Supplier Device Package	Module
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.5 V

SIC 2N-CH 1200V 1.425KA MODUL

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Configuration	Package / Case	Supplier Device Package	Power - Max [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Max]	Operating Temperature [Min]
GE Aerospace GE12160CEA3	90000 pF	4.5 V	3744 nC	1.425 kA	1200 V	1.2 kV	2 N-Channel (Half Bridge)	Module	Module	3.75 kW	Chassis Mount	1.5 mOhm	Silicon Carbide (SiC)	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 1200V (1.2kV) 1.425kA (Tc) 3.75kW (Tc) Chassis Mount Module

Technical documentation and resources