SIC 2N-CH 1200V 1.425KA MODUL
| Part | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) | Configuration | Package / Case | Supplier Device Package | Power - Max [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | Technology | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GE Aerospace GE12160CEA3 | 90000 pF | 4.5 V | 3744 nC | 1.425 kA | 1200 V | 1.2 kV | 2 N-Channel (Half Bridge) | Module | Module | 3.75 kW | Chassis Mount | 1.5 mOhm | Silicon Carbide (SiC) | 150 °C | -55 °C |