SPP35N10

Obsolete

Infineon Technologies

MOSFET N-CH 100V 35A TO220-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 100V 35A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP35N10

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	1570 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	44 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case
Infineon Technologies SPP35N10	10 V	100 V	35 A	PG-TO220-3-1	1570 pF	N-Channel	65 nC	Through Hole	20 V	44 mOhm	150 W	4 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 35A (Tc) 150W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources

No documents available