Specification	SI7489DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	28 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	160 nC
Input Capacitance (Ciss) (Max)	4600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	83 W, 5.2 W
Rds On (Max)	41 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SI7489 Series

Part	Input Capacitance (Ciss) (Max)	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Gate Charge (Max)	Power Dissipation (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Technology	FET Type	Package / Case	Vgs(th) (Max)
Vishay Dale SI7489DP-T1-GE3	4600 pF	PowerPAK® SO-8	10 V	4.5 V	-55 °C	150 °C	28 A	Surface Mount	160 nC	5.2 W 83 W	20 V	100 V	41 mOhm	MOSFET (Metal Oxide)	P-Channel	PowerPAK® SO-8	3 V

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