
RN4981FE,LF(CT
ActiveToshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.1W ES6

RN4981FE,LF(CT
ActiveToshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.1W ES6
Description
General part information
RN4981 Series
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
Technical Specifications
Parameters and characteristics for this part
| Specification | RN4981FE,LF(CT |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 500 nA |
| DC Current Gain (hFE) (Min) | 30 |
| Frequency - Transition (Options) | 200MHz, 250MHz |
| Mounting Type | Surface Mount |
| NPN Count | 1 |
| Package / Case | SOT-563, SOT-666 |
| Package Name | ES6 |
| PNP Count | 1 |
| Power - Max | 100 mW |
| Resistor - Base (R1) Resistance | 4.7 kOhm |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Transistor Configuration | Pre-Biased, Dual |
| Transistor Type | NPN, PNP |
| Vce Saturation (Max) | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
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