CSD16409Q3
Active25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 12.4 MOHM 8-VSON-CLIP -55 TO 150
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CSD16409Q3
Active25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 12.4 MOHM 8-VSON-CLIP -55 TO 150
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Technical Specifications
Parameters and characteristics for this part
| Specification | CSD16409Q3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A, 15 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) [Max] | 2.6 W |
| Rds On (Max) @ Id, Vgs [Max] | 8.2 mOhm |
| Supplier Device Package | 8-VSONP (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 16 V |
| Vgs (Max) [Min] | -12 V |
| Vgs(th) (Max) @ Id [Max] | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Bristol Electronics | N/A | 5 | $ 1.05 | |
| 6 | $ 0.94 | |||
| 21 | $ 0.68 | |||
| 75 | $ 0.39 | |||
| 255 | $ 0.34 | |||
| 552 | $ 0.29 | |||
| 1311 | $ 0.27 | |||
| DigiKey | N/A | 1 | $ 1.50 | |
| 10 | $ 0.95 | |||
| 100 | $ 0.63 | |||
| 500 | $ 0.49 | |||
| 1000 | $ 0.45 | |||
| 2500 | $ 0.37 | |||
| 5000 | $ 0.35 | |||
| Digikey | Cut Tape (CT) | 1 | $ 0.93 | |
| 10 | $ 0.76 | |||
| 100 | $ 0.59 | |||
| 500 | $ 0.50 | |||
| 1000 | $ 0.41 | |||
| Digi-Reel® | 1 | $ 0.93 | ||
| 10 | $ 0.76 | |||
| 100 | $ 0.59 | |||
| 500 | $ 0.50 | |||
| 1000 | $ 0.41 | |||
| Tape & Reel (TR) | 2500 | $ 0.38 | ||
| 5000 | $ 0.37 | |||
| 12500 | $ 0.35 | |||
| 25000 | $ 0.35 | |||
| Mouser Electronics | N/A | 1 | $ 0.91 | |
| 10 | $ 0.78 | |||
| 100 | $ 0.55 | |||
| 500 | $ 0.44 | |||
| 1000 | $ 0.41 | |||
| 2500 | $ 0.36 | |||
| 5000 | $ 0.35 | |||
| Quest Components | N/A | 1 | $ 1.25 | |
| 1 | $ 1.38 | |||
| 1 | $ 1.40 | |||
| 5 | $ 1.00 | |||
| 290 | $ 0.55 | |||
| 477 | $ 0.36 | |||
| 1447 | $ 0.48 | |||
| 2199 | $ 0.35 | |||
| Rochester Electronics | N/A | 1 | $ 0.39 | |
| 25 | $ 0.38 | |||
| 100 | $ 0.36 | |||
| 500 | $ 0.35 | |||
| 1000 | $ 0.33 | |||
| Texas Instruments | LARGE T&R | 1 | $ 0.69 | |
| 100 | $ 0.53 | |||
| 250 | $ 0.39 | |||
| 1000 | $ 0.28 | |||
| Verical | N/A | 861 | $ 0.44 | |
| 1000 | $ 0.41 | |||
| Win Source Electronics | N/A | 345 | $ 0.15 | |
| 835 | $ 0.12 | |||
| 1295 | $ 0.12 | |||
| 1790 | $ 0.11 | |||
| 2295 | $ 0.11 | |||
| 3095 | $ 0.10 | |||
CSD16409Q3 Series
25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 12.4 mOhm
| Part | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Vgs (Max) [Max] | Vgs (Max) [Min] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | FET Type | Vgs(th) (Max) @ Id [Max] | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Package / Case | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD16409Q3 | 8.2 mOhm | 25 V | 16 V | -12 V | MOSFET (Metal Oxide) | 4.5 V, 10 V | 150 °C | -55 °C | Surface Mount | N-Channel | 2.3 V | 5.6 nC | 15 A, 60 A | 800 pF | 8-VSONP (5x6) | 8-PowerTDFN | 2.6 W |
Description
General part information
CSD16409Q3 Series
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Documents
Technical documentation and resources