
2ED21091S06FXUMA1
ActiveTHE 2ED21091S06F IS A 650 V, 0.7 A HALF-BRIDGE GATE DRIVER WITH INTEGRATED BOOTSTRAP DIODE AND SHUTDOWN IN DSO-8 PACKAGE
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2ED21091S06FXUMA1
ActiveTHE 2ED21091S06F IS A 650 V, 0.7 A HALF-BRIDGE GATE DRIVER WITH INTEGRATED BOOTSTRAP DIODE AND SHUTDOWN IN DSO-8 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2ED21091S06FXUMA1 |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 700 mA |
| Current - Peak Output (Source, Sink) [custom] | 290 mA |
| Driven Configuration | High-Side and Low-Side |
| Gate Type | N-Channel MOSFET, IGBT |
| High Side Voltage - Max (Bootstrap) [Max] | 20 V |
| Logic Voltage - VIL, VIH [custom] | 1.1 V |
| Logic Voltage - VIL, VIH [custom] | 1.7 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 35 ns |
| Rise / Fall Time (Typ) [custom] | 100 ns |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.36 | |
| 10 | $ 1.22 | |||
| 25 | $ 1.16 | |||
| 100 | $ 0.95 | |||
| 250 | $ 0.89 | |||
| 500 | $ 0.78 | |||
| 1000 | $ 0.62 | |||
| Digi-Reel® | 1 | $ 1.36 | ||
| 10 | $ 1.22 | |||
| 25 | $ 1.16 | |||
| 100 | $ 0.95 | |||
| 250 | $ 0.89 | |||
| 500 | $ 0.78 | |||
| 1000 | $ 0.62 | |||
| Tape & Reel (TR) | 2500 | $ 0.51 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 0.86 | |
| 10 | $ 0.71 | |||
| 25 | $ 0.67 | |||
| 50 | $ 0.63 | |||
| 100 | $ 0.60 | |||
| 250 | $ 0.60 | |||
| 500 | $ 0.60 | |||
| 1000 | $ 0.59 | |||
Description
General part information
2ED21091 Series
650 Vhalf-bridgehigh speed powerMOSFETandIGBTgate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. Based onInfineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Documents
Technical documentation and resources
No documents available