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2ED21091S06FXUMA1 - Infineon Technologies AG-2ED21091S06FXUMA1 Gate and Power Drivers 650 V Half Bridge Gate Driver with Integrated Boot Strap Diode

2ED21091S06FXUMA1

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Infineon Technologies

THE 2ED21091S06F IS A 650 V, 0.7 A HALF-BRIDGE GATE DRIVER WITH INTEGRATED BOOTSTRAP DIODE AND SHUTDOWN IN DSO-8 PACKAGE

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2ED21091S06FXUMA1 - Infineon Technologies AG-2ED21091S06FXUMA1 Gate and Power Drivers 650 V Half Bridge Gate Driver with Integrated Boot Strap Diode

2ED21091S06FXUMA1

Active
Infineon Technologies

THE 2ED21091S06F IS A 650 V, 0.7 A HALF-BRIDGE GATE DRIVER WITH INTEGRATED BOOTSTRAP DIODE AND SHUTDOWN IN DSO-8 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2ED21091S06FXUMA1
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]700 mA
Current - Peak Output (Source, Sink) [custom]290 mA
Driven ConfigurationHigh-Side and Low-Side
Gate TypeN-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]20 V
Logic Voltage - VIL, VIH [custom]1.1 V
Logic Voltage - VIL, VIH [custom]1.7 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]35 ns
Rise / Fall Time (Typ) [custom]100 ns
Voltage - Supply [Max]20 V
Voltage - Supply [Min]10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.36
10$ 1.22
25$ 1.16
100$ 0.95
250$ 0.89
500$ 0.78
1000$ 0.62
Digi-Reel® 1$ 1.36
10$ 1.22
25$ 1.16
100$ 0.95
250$ 0.89
500$ 0.78
1000$ 0.62
Tape & Reel (TR) 2500$ 0.51
NewarkEach (Supplied on Cut Tape) 1$ 0.86
10$ 0.71
25$ 0.67
50$ 0.63
100$ 0.60
250$ 0.60
500$ 0.60
1000$ 0.59

Description

General part information

2ED21091 Series

650 Vhalf-bridgehigh speed powerMOSFETandIGBTgate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. Based onInfineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.

Documents

Technical documentation and resources

No documents available