IXFH36N55Q2

Obsolete

IXYS

MOSFET N-CH 550V 36A TO247AD

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Obsolete

IXYS

MOSFET N-CH 550V 36A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH36N55Q2

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	4100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	560 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Mounting Type	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFH36N55Q2	5 V	TO-247AD (IXFH)	560 W	110 nC	10 V	-55 °C	150 °C	4100 pF	550 V	30 V	180 mOhm	36 A	MOSFET (Metal Oxide)	N-Channel	Through Hole	TO-247-3
IXYS IXFH36N55Q	4.5 V	TO-247AD (IXFH)			10 V	-55 °C	150 °C	4500 pF	550 V	30 V	160 mOhm	36 A	MOSFET (Metal Oxide)	N-Channel	Through Hole	TO-247-3	500 W	128 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 550 V 36A (Tc) 560W (Tc) Through Hole TO-247AD (IXFH)

Technical documentation and resources

No documents available