IPL60R285P7AUMA1
ActiveCOOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; THINPAK 8X8 PACKAGE; 285 MOHM; PRICE/PERFORMANCE
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IPL60R285P7AUMA1
ActiveCOOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; THINPAK 8X8 PACKAGE; 285 MOHM; PRICE/PERFORMANCE
Technical Specifications
Parameters and characteristics for this part
| Specification | IPL60R285P7AUMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 18 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 4-PowerTSFN |
| Power Dissipation (Max) | 59 W |
| Rds On (Max) @ Id, Vgs | 285 mOhm |
| Supplier Device Package | PG-VSON-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPL60R285 Series
The600V CoolMOS™ P7superjunction (SJ) MOSFET is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Documents
Technical documentation and resources