IXFX21N100Q

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IXYS

TRANS MOSFET N-CH 1KV 21A 3-PIN(3+TAB) PLUS 247

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IXYS

TRANS MOSFET N-CH 1KV 21A 3-PIN(3+TAB) PLUS 247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX21N100Q

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds	6900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5.5 V

Part	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
IXYS IXFX21N100Q	5.5 V	MOSFET (Metal Oxide)	-55 °C	150 °C	500 mOhm	20 V	1000 V	10 V	Through Hole	21 A	6900 pF	N-Channel	TO-247-3 Variant	PLUS247™-3	170 nC	500 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1000 V 21A (Tc) 500W (Tc) Through Hole PLUS247™-3

Technical documentation and resources

No documents available