CEFB104-G

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Comchip Technology

DIODE GEN PURP 400V 1A DO214AA

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Comchip Technology

DIODE GEN PURP 400V 1A DO214AA

Technical Specifications

Parameters and characteristics for this part

Specification	CEFB104-G

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

DIODE GEN PURP 400V 1A DO214AA

Part	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction	Mounting Type	Supplier Device Package	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Package / Case	Current - Average Rectified (Io)
Comchip Technology CEFB104-G	5 µA	200 mA, 500 ns	150 °C	Surface Mount	SMB	DO-214AA	400 V	Standard	35 ns	1.1 V	DO-214AA, SMB	1 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

Diode 400 V 1A Surface Mount DO-214AA (SMB)

Technical documentation and resources