DMN2500UFB4-7B

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Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

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Active

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2500UFB4-7B

Current - Continuous Drain (Id) @ 25°C	810 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.737 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	60.67 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	460 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	400 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	6 V
Vgs(th) (Max) @ Id	1 V

NRND = Not Recommended for New Design

Part	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Qualification	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
Diodes Inc DMN2500UFB4-7B	3-XFDFN	6 V	0.737 nC	Automotive	1 V	Surface Mount	-55 °C	150 °C	60.67 pF	N-Channel	MOSFET (Metal Oxide)	20 V	1.8 V 4.5 V	810 mA	AEC-Q101	460 mW	400 mOhm
Diodes Inc DMN2500UFB4-7	3-XFDFN	6 V	0.74 nC		1 V	Surface Mount	-55 °C	150 °C	60.67 pF	N-Channel	MOSFET (Metal Oxide)	20 V	1.8 V 4.5 V	810 mA		460 mW	400 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NRND = Not Recommended for New Design

Technical documentation and resources