CMF01(TE12L,Q,M)

Obsolete

Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 2A M-FLAT

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Obsolete

Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 2A M-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CMF01(TE12L,Q,M)

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-128
Speed	200 mA, 500 ns
Supplier Device Package	M-FLAT (2.4x3.8)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Average Rectified (Io)	Package / Case	Speed
Toshiba Semiconductor and Storage CMF01(TE12L,Q,M)	600 V	M-FLAT (2.4x3.8)	50 µA	2 V	Standard	150 °C	-40 °C	Surface Mount	2 A	SOD-128	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 2A Surface Mount M-FLAT (2.4x3.8)

Technical documentation and resources

No documents available