
R6007ENXC7G
ActiveRohm Semiconductor
MOSFET SINGLE, 7A, 600V, 46W ROHS COMPLIANT: YES

R6007ENXC7G
ActiveRohm Semiconductor
MOSFET SINGLE, 7A, 600V, 46W ROHS COMPLIANT: YES
Description
General part information
R6007ENX Series
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Technical Specifications
Parameters and characteristics for this part
| Specification | R6007ENXC7G |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 7 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 20 nC |
| Input Capacitance (Ciss) (Max) | 390 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220FM |
| Power Dissipation (Max) | 46 W |
| Rds On (Max) | 620 mOhm, 620 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Two-Resistor Model for Thermal Simulation
Compliance of the RoHS directive
Measurement Method and Usage of Thermal Resistance RthJC
Package Dimensions
MOSFET Gate Drive Current Setting for Motor Driving
How to Use the Thermal Resistance and Thermal Characteristics Parameters
How to Use LTspice® Models
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Reliability Test Result
Basics of Thermal Resistance and Heat Dissipation
How to Use LTspice® Models: Tips for Improving Convergence
Judgment Criteria of Thermal Evaluation
Notes for Calculating Power Consumption:Static Operation
Calculation of Power Dissipation in Switching Circuit
What is a Thermal Model? (Transistor)
ESD Data
How to Create Symbols for PSpice Models
Temperature derating method for Safe Operating Area (SOA)
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
What Is Thermal Design
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
MOSFET Gate Resistor Setting for Motor Driving
Moisture Sensitivity Level - Transistors
Constitution Materials List
PCB Layout Thermal Design Guide
Method for Monitoring Switching Waveform
Inner Structure
θ<sub>JC</sub> and Ψ<sub>JT</sub>
ROHM Solution Simulator Power Device User's Guide for Inverter
Explanation for Marking
R6007ENX Data Sheet
Notes for Temperature Measurement Using Thermocouples
Precautions When Measuring the Rear of the Package with a Thermocouple
Impedance Characteristics of Bypass Capacitor
About Export Regulations
Anti-Whisker formation - Transistors
Types and Features of Transistors
List of Transistor Package Thermal Resistance
Importance of Probe Calibration When Measuring Power: Deskew
Part Explanation
About Flammability of Materials