Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC10H065G2-TR |
|---|---|
| Capacitance @ Vr, F | 480 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | D2PAK |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.47 | |
| 10 | $ 2.91 | |||
| 100 | $ 2.36 | |||
| 500 | $ 2.10 | |||
| Digi-Reel® | 1 | $ 3.47 | ||
| 10 | $ 2.91 | |||
| 100 | $ 2.36 | |||
| 500 | $ 2.10 | |||
| Tape & Reel (TR) | 1000 | $ 1.79 | ||
| 2000 | $ 1.69 | |||
| 5000 | $ 1.62 | |||
Description
General part information
STPSC10H065G2 Series
This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.
The STPSC10H065G2 will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.