PSMN012-80BS,118

Active

Nexperia USA Inc.

N-CHANNEL 80 V 11 MΩ STANDARD LEVEL MOSFET IN D2PAK

Find alt

Alpha

PSMN012-80BS,118

Active

Nexperia USA Inc.

N-CHANNEL 80 V 11 MΩ STANDARD LEVEL MOSFET IN D2PAK

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN012 Series

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN012-80BS,118

Current - Continuous Drain (Id) (Tc)	74 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	43 nC
Input Capacitance (Ciss) (Max)	2782 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Power Dissipation (Max)	148 W
Rds On (Max)	11 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

PSMN012 Series

N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology enhanced for repetitive avalanche

Part	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Mounting Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Vgs (Max)	Package / Case	FET Type	Gate Charge (Max)	Package Name	Current - Continuous Drain (Id) (Ta)	FET Feature	Channel Count	Configuration	Configuration - Features	Power - Max (Ta)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Nexperia USA Inc. PSMN012-80PS,127	74 A	2782 pF	Through Hole	11 mOhm	-55 °C	175 °C	148 W	MOSFET (Metal Oxide)	80 V	10 V	4 V	20 V	TO-220-3	N-Channel	43 nC	TO-220AB
Nexperia USA Inc. PSMN012-60HLX		2953 pF	Surface Mount	12.5 mOhm	-55 °C	175 °C		MOSFET (Metal Oxide)	60 V		2.1 V		8-LFPAK56 SOT-1205		22.4 nC 22.4 nC	LFPAK56D	40 A	Logic Level Gate	2	N-Channel	Dual	64 W
Nexperia USA Inc. PSMN012-80BS,118	74 A	2782 pF	Surface Mount	11 mOhm	-55 °C	175 °C	148 W	MOSFET (Metal Oxide)	80 V	10 V	4 V	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	43 nC	D2PAK
Nexperia USA Inc. PSMN012-60YS,115	59 A	1685 pF	Surface Mount	11.1 mOhm	-55 °C	175 °C	89 W	MOSFET (Metal Oxide)	60 V	10 V	4 V	20 V	SC-100 SOT-669	N-Channel	28.4 nC	LFPAK56 Power-SO8
Nexperia USA Inc. PSMN012-100YLX	85 A	7973 pF	Surface Mount	11.9 mOhm	-55 °C	175 °C	238 W	MOSFET (Metal Oxide)	100 V		2.1 V	20 V	SC-100 SOT-669	N-Channel	118 nC	LFPAK56 Power-SO8							10 V	5 V