
SPD07N60C3ATMA1
ActiveInfineon Technologies
POWER MOSFET, N CHANNEL, 650 V, 7.3 A, 0.54 OHM, TO-252 (DPAK), SURFACE MOUNT
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DocumentsTechnical Data Sheet EN

SPD07N60C3ATMA1
ActiveInfineon Technologies
POWER MOSFET, N CHANNEL, 650 V, 7.3 A, 0.54 OHM, TO-252 (DPAK), SURFACE MOUNT
Deep-Dive with AI
DocumentsTechnical Data Sheet EN
Technical Specifications
Parameters and characteristics for this part
| Specification | SPD07N60C3ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7.3 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 27 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 83 W |
| Rds On (Max) @ Id, Vgs [Max] | 600 mOhm |
| Supplier Device Package | PG-TO252-3-313 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SPD07N60 Series
The SPD07N60C3 is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for server, telecom, PC power and adapter applications.
Documents
Technical documentation and resources