BAS1602LE6327XTMA1

Infineon Technologies

DIODE GP 80V 200MA TSLP-2-1

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Infineon Technologies

DIODE GP 80V 200MA TSLP-2-1

Technical Specifications

Parameters and characteristics for this part

Specification	BAS1602LE6327XTMA1

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOD-882
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	PG-TSLP-2-1
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Speed	Speed	Supplier Device Package	Package / Case	Mounting Type	Operating Temperature - Junction	Reverse Recovery Time (trr)	Technology	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
Infineon Technologies BAS1602LE6327XTMA1	Any Speed	200 mA	PG-TSLP-2-1	SOD-882	Surface Mount	150 °C	4 ns	Standard	200 mA	1.25 V	2 pF	80 V	1 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 80 V 200mA Surface Mount PG-TSLP-2-1

Technical documentation and resources