IXGP12N120A3

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IXYS

TRANSISTOR: IGBT; GENX3™; 1.2KV; 12A; 100W; TO220-3

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Active

IXYS

TRANSISTOR: IGBT; GENX3™; 1.2KV; 12A; 100W; TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXGP12N120A3

Current - Collector (Ic) (Max) [Max]	22 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	20.4 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	100 W
Supplier Device Package	TO-220-3
Vce(on) (Max) @ Vge, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Supplier Device Package	Gate Charge	Test Condition	Current - Collector Pulsed (Icm)	Package / Case	Current - Collector (Ic) (Max) [Max]	IGBT Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Switching Energy	Reverse Recovery Time (trr)
IXYS IXGP12N100	100 W	1000 V	100 ns 850 ns	3.5 V	-55 °C	150 °C	Through Hole	TO-220-3	65 nC	12 A 15 V 120 Ohm 800 V	48 A	TO-220-3	24 A
IXYS IXGP12N120A3	100 W	1200 V		3 V	-55 °C	150 °C	Through Hole	TO-220-3	20.4 nC		60 A	TO-220-3	22 A	PT
IXYS IXGP12N120A2	75 W	1200 V		3 V	-55 °C	150 °C	Through Hole	TO-220-3	24 nC	12 A 15 V 100 Ohm 960 V	48 A	TO-220-3	24 A	PT	15 ns	680 ns	5.4 mJ
IXYS IXGP12N60C	100 W	600 V		2.7 V	-55 °C	150 °C	Through Hole	TO-220-3	32 nC		48 A	TO-220-3	24 A		20 ns	60 ns	90 µJ
IXYS IXGP12N60CD1	100 W	600 V		2.7 V	-55 °C	150 °C	Through Hole	TO-220-3	32 nC		48 A	TO-220-3	24 A		20 ns	60 ns	90 µJ	35 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 1200 V 22 A 100 W Through Hole TO-220-3

Technical documentation and resources