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SIGC12T60NCX7SA2

Obsolete
Infineon Technologies

IGBT 3 CHIP 600V WAFER

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SIGC12T60NCX7SA2

Obsolete
Infineon Technologies

IGBT 3 CHIP 600V WAFER

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSIGC12T60NCX7SA2
Current - Collector Pulsed (Icm)30 A
IGBT TypeNPT
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseDie
Supplier Device PackageDie
Td (on/off) @ 25°C110 ns, 21 ns
Test Condition27 Ohm, 15 V, 10 A, 300 V
Vce(on) (Max) @ Vge, Ic2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SIGC12 Series

IGBT NPT 600 V 10 A Surface Mount Die

Documents

Technical documentation and resources

No documents available