IXGX100N170

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IXYS

TRANSISTOR: IGBT; NPT; 1.7KV; 100A; 830W; PLUS247™

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Active

IXYS

TRANSISTOR: IGBT; NPT; 1.7KV; 100A; 830W; PLUS247™

Technical Specifications

Parameters and characteristics for this part

Specification	IXGX100N170

Current - Collector Pulsed (Icm)	600 A
Gate Charge	425 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power - Max [Max]	830 W
Supplier Device Package	PLUS247™-3
Vce(on) (Max) @ Vge, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	1700 V

Part	Power - Max [Max]	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	IGBT Type	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Gate Charge
IXYS IXGX100N170	830 W	600 A	1700 V	TO-247-3 Variant	-55 °C	150 °C	Through Hole	NPT	3 V	PLUS247™-3	425 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT NPT 1700 V 170 A 830 W Through Hole PLUS247™-3

Technical documentation and resources

No documents available