AUIRF1405ZS-7P

Obsolete

Infineon Technologies

MOSFET N-CH 55V 120A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 55V 120A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF1405ZS-7P

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	230 nC
Input Capacitance (Ciss) (Max) @ Vds	5360 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CB, TO-263-7, D2PAK
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	4.9 mOhm
Supplier Device Package	D2PAK (7-Lead)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Package / Case
Infineon Technologies AUIRF1405ZS-7P	N-Channel	4 V	20 V	10 V	D2PAK (7-Lead)	5360 pF	4.9 mOhm	-55 °C	175 ░C	MOSFET (Metal Oxide)	Surface Mount	230 nC	120 A	230 W	55 V	D2PAK TO-263-7 TO-263CB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 120A (Tc) 230W (Tc) Surface Mount D2PAK (7-Lead)

Technical documentation and resources