IDC40D120T6HX1SA1

Obsolete

Infineon Technologies

DIODE GEN PURP 1.2KV 75A D2PAK

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Obsolete

Infineon Technologies

DIODE GEN PURP 1.2KV 75A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IDC40D120T6HX1SA1

Current - Average Rectified (Io)	75 A
Current - Reverse Leakage @ Vr	14 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	D2PAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.25 V

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Speed	Speed	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case
Infineon Technologies IDC40D120T6MX1SA4	14 µA	75 A	Standard Recovery >500ns	200 mA	Standard	1.2 kV	Sawn on foil	Surface Mount	2.05 V	-40 °C	175 ░C	Die
Infineon Technologies IDC40D120T6HX1SA1	14 µA	75 A	Standard Recovery >500ns	200 mA	Standard	1.2 kV	D2PAK	Surface Mount	2.25 V	-40 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 75A Surface Mount D2PAK

Technical documentation and resources