1N3296AR

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GeneSiC Semiconductor

DIODE GP REV 1.2KV 100A DO205AA

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GeneSiC Semiconductor

DIODE GP REV 1.2KV 100A DO205AA

Technical Specifications

Parameters and characteristics for this part

Specification	1N3296AR

Current - Average Rectified (Io)	100 A
Current - Reverse Leakage @ Vr	9 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Stud, DO-8, DO-205AA
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-8
Supplier Device Package	DO-205AA
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.5 V

Part	Package / Case	Mounting Type	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Supplier Device Package	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Speed
GeneSiC Semiconductor 1N3296AR	DO-205AA DO-8 Stud	Chassis Stud Mount	Reverse Polarity Standard	200 C	-40 °C	DO-8	DO-205AA	100 A	1.5 V	1.2 kV	9 mA	Standard Recovery >500ns	200 mA

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General part information

Diode 1200 V 100A Chassis, Stud Mount DO-205AA (DO-8)

Technical documentation and resources