1N2131AR

Active

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 60A DO5

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 60A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	1N2131AR

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

DIODE GEN PURP REV 200V 60A DO5

Part	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Speed	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case
GeneSiC Semiconductor 1N2131AR	1.1 V	DO-5	Chassis, Stud Mount	60 A	200 V	Reverse Polarity, Standard	Standard Recovery >500ns	200 mA	10 µA	200 C	-65 C	DO-203AB, DO-5, Stud

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	800	$ 7.42

General part information

Diode 200 V 60A Chassis, Stud Mount DO-5

Technical documentation and resources