
STTH200W06TV1
ObsoleteSTMicroelectronics
DIODE MODULE GP 600V 100A ISOTOP
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

STTH200W06TV1
ObsoleteSTMicroelectronics
DIODE MODULE GP 600V 100A ISOTOP
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | STTH200W06TV1 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 100 A |
| Current - Reverse Leakage @ Vr | 30 µA |
| Diode Configuration | 2 Independent |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction | 150 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Reverse Recovery Time (trr) | 75 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | ISOTOP |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
STTH2R02-Y Series
The STTH2R06 uses ST Turbo 2 600 V planar Pt doping technology. It is specially suited for switching mode base drive and transistor circuits.
Packaged in axial, SMA, SMB and SMC, this device is intended for use in high frequency inverters, free wheeling and polarity protection.
Documents
Technical documentation and resources