1N1183

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DIODE GEN PURP 50V 35A DO203AB

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DIODE GEN PURP 50V 35A DO203AB

Description

General part information

Diode 50 V 35A Chassis, Stud Mount DO-203AB

Parameters and characteristics for this part

Specification	1N1183

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction (Max)	190 °C
Operating Temperature - Junction (Min)	-65 °C
Package / Case	Stud, DO-5, DO-203AB
Package Name	DO-203AB
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	50 V
Voltage - Forward (Vf) (Max)	1.2 V

Part	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Package Name	Package / Case	Technology	Current - Reverse Leakage	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Voltage - Forward (Vf) (Max)	Mounting Type
GeneSiC Semiconductor 1N1183A	200 °C	-65 °C	DO-203AB	DO-203AB DO-5 Stud	Standard	10 µA	40 A	50 V	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1.1 V	Chassis Stud Mount
GeneSiC Semiconductor 1N1183	190 °C	-65 °C	DO-203AB	DO-203AB DO-5 Stud	Standard	10 µA	35 A	50 V	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1.2 V	Chassis Stud Mount
GeneSiC Semiconductor 1N1183	190 °C	-65 °C	DO-203AB	DO-203AB DO-5 Stud	Standard	10 µA	35 A	50 V	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1.2 V	Chassis Stud Mount
GeneSiC Semiconductor 1N1183A	200 °C	-65 °C	DO-203AB	DO-203AB DO-5 Stud	Standard	10 µA	40 A	50 V	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1.1 V	Chassis Stud Mount

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