VSLY5850

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Vishay Semiconductor Opto Division

EMITTER IR 850NM 100MA T 1 3/4

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Vishay Semiconductor Opto Division

EMITTER IR 850NM 100MA T 1 3/4

Technical Specifications

Parameters and characteristics for this part

Specification	VSLY5850

Current - DC Forward (If) (Max) [Max]	100 mA
Mounting Type	Through Hole
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Orientation	Top View
Package / Case	T 1 3/4
Radiant Intensity (Ie) Min @ If	100 mA
Radiant Intensity (Ie) Min @ If [Min]	300 mW/sr
Type	Infrared (IR)
Viewing Angle	6 °
Voltage - Forward (Vf) (Typ)	1.65 V
Wavelength	850 nm

EMITTER IR 850NM 100MA T 1 3/4

Part	Radiant Intensity (Ie) Min @ If	Radiant Intensity (Ie) Min @ If [Min]	Wavelength	Package / Case	Current - DC Forward (If) (Max) [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Forward (Vf) (Typ)	Type	Orientation	Viewing Angle
Vishay Semiconductor Opto Division VSLY5850	100 mA	300 mW/sr	850 nm	T 1 3/4	100 mA	Through Hole	85 °C	-40 °C	1.65 V	Infrared (IR)	Top View	6 °

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General part information

Infrared (IR) Emitter 850nm 1.65V 100mA 300mW/sr @ 100mA 6° T 1 3/4

Technical documentation and resources