
IPB049N08N5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; D2PAK TO-263 PACKAGE; 4.9 MOHM;
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IPB049N08N5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; D2PAK TO-263 PACKAGE; 4.9 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB049N08N5ATMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) @ Id, Vgs | 4.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.8 V |
Pricing
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Description
General part information
IPB049 Series
Infineon’sOptiMOS™ 5 80Vindustrial power MOSFET IPB049N08N5 offers a RDS(on)reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification intelecomandserverpower supplies. In addition, they can also be utilized in other industrial applications such assolar,low voltage drivesandadapters.
Documents
Technical documentation and resources
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