BYC75W-1200PQ

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WeEn Semiconductors

DIODE GEN PURP 1.2KV 75A TO247-2

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WeEn Semiconductors

DIODE GEN PURP 1.2KV 75A TO247-2

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	BYC75W-1200PQ	BYC75 Series

Current - Average Rectified (Io)	75 A	75 A
Current - Reverse Leakage @ Vr	250 µA	10 - 250 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	175 °C	175 °C
Package / Case	TO-247-2	TO-247-2
Reverse Recovery Time (trr)	85 ns	50 - 85 ns
Speed	200 mA, 500 ns	200 - 500 mA
Supplier Device Package	TO-247-2	TO-247-2
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV	1.2 - 600 V
Voltage - Forward (Vf) (Max) @ If	-	2.75 V

DIODE GEN PURP 600V 75A TO247-2

Part	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Technology
WeEn Semiconductors BYC75W-600PQ	200 mA, 500 ns	10 µA	175 °C	75 A	TO-247-2	600 V	Through Hole	TO-247-2	50 ns	2.75 V	Standard
WeEn Semiconductors BYC75W-1200PQ	200 mA, 500 ns	250 µA	175 °C	75 A	TO-247-2	1.2 kV	Through Hole	TO-247-2	85 ns		Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 75A Through Hole TO-247-2

Technical documentation and resources

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