SPD50N06S2L-13

Obsolete

Infineon Technologies

MOSFET N-CH 55V 50A TO252-3

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Obsolete

Infineon Technologies

MOSFET N-CH 55V 50A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPD50N06S2L-13

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	69 nC
Input Capacitance (Ciss) (Max) @ Vds	2300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	136 W
Rds On (Max) @ Id, Vgs	12.7 mOhm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	FET Type	Package / Case	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies SPD50N06S2L-13	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	PG-TO252-3-11	2 V	2300 pF	Surface Mount	55 V	50 A	69 nC	12.7 mOhm	136 W	20 V	-55 °C	175 ░C	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11

Technical documentation and resources