1N3880

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GeneSiC Semiconductor

DIODE GEN PURP 100V 6A DO4

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GeneSiC Semiconductor

DIODE GEN PURP 100V 6A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	1N3880

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Reverse Recovery Time (trr)	200 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-4
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Technology	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Supplier Device Package	Speed	Package / Case	Voltage - Forward (Vf) (Max) @ If	Mounting Type
GeneSiC Semiconductor 1N3880	Standard	15 µA	200 ns	100 V	150 °C	-65 C	6 A	DO-4	200 mA 500 ns	DO-203AA DO-4 Stud	1.4 V	Chassis Stud Mount

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General part information

Diode 100 V 6A Chassis, Stud Mount DO-4

Technical documentation and resources