DS1265AB-70IND+

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Analog Devices Inc./Maxim Integrated

IC NVSRAM 8MBIT PARALLEL 36EDIP

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DS1265AB-70IND+

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Analog Devices Inc./Maxim Integrated

IC NVSRAM 8MBIT PARALLEL 36EDIP

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Description Specifications Series Pricing CAD Documents

Description

General part information

DS1265AB Series

The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.

Technical Specifications

Parameters and characteristics for this part

Specification	DS1265AB-70IND+

Access Time	70 ns
Memory Depth	1 M
Memory Format	NVSRAM
Memory Interface (Type)	Parallel
Memory Size	1 MB
Memory Type	Non-Volatile
Memory Width	8 bit
Mounting Type	Through Hole
Operating Temperature (Max)	85 °C
Operating Temperature (Min)	-40 °C
Package Length	0.61 in
Package Name	36-DIP Module, 36-EDIP
Package Width	15.49 mm
Technology	NVSRAM (Non-Volatile SRAM)
Voltage - Supply (Maximum)	5.25 V
Voltage - Supply (Minimum)	4.75 V
Write Cycle Time - Page	70 ns
Write Cycle Time - Word	70 ns

DS1265AB Series

Part	Package Name	Technology	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Mounting Type	Memory Interface (Type)	Memory Size	Memory Width	Memory Depth	Memory Type	Package Length	Package Width	Memory Format	Access Time	Operating Temperature (Min)	Operating Temperature (Max)	Write Cycle Time - Word	Write Cycle Time - Page
Analog Devices Inc./Maxim Integrated DS1265AB-70+	36-DIP Module 36-EDIP	NVSRAM (Non-Volatile SRAM)	5.25 V	4.75 V	Through Hole	Parallel	1 MB	8 bit	1 M	Non-Volatile	0.61 in	15.49 mm	NVSRAM	70 ns	0 °C	70 °C	70 ns	70 ns
Analog Devices Inc./Maxim Integrated DS1265AB-100+	36-DIP Module 36-EDIP	NVSRAM (Non-Volatile SRAM)	5.25 V	4.75 V	Through Hole	Parallel	1 MB	8 bit	1 M	Non-Volatile	0.61 in	15.49 mm	NVSRAM	100 ns	0 °C	70 °C	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1265AB-70	36-DIP Module 36-EDIP	NVSRAM (Non-Volatile SRAM)	5.25 V	4.75 V	Through Hole	Parallel	1 MB	8 bit	1 M	Non-Volatile	0.61 in	15.49 mm	NVSRAM	70 ns	0 °C	70 °C	70 ns	70 ns
Analog Devices Inc./Maxim Integrated DS1265AB-70IND+	36-DIP Module 36-EDIP	NVSRAM (Non-Volatile SRAM)	5.25 V	4.75 V	Through Hole	Parallel	1 MB	8 bit	1 M	Non-Volatile	0.61 in	15.49 mm	NVSRAM	70 ns	-40 °C	85 °C	70 ns	70 ns
Analog Devices Inc./Maxim Integrated DS1265AB-100	36-DIP Module 36-EDIP	NVSRAM (Non-Volatile SRAM)	5.25 V	4.75 V	Through Hole	Parallel	1 MB	8 bit	1 M	Non-Volatile	0.61 in	15.49 mm	NVSRAM	100 ns	0 °C	70 °C	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1265AB-70IND	36-DIP Module 36-EDIP	NVSRAM (Non-Volatile SRAM)	5.25 V	4.75 V	Through Hole	Parallel	1 MB	8 bit	1 M	Non-Volatile	0.61 in	15.49 mm	NVSRAM	70 ns	-40 °C	85 °C	70 ns	70 ns

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

DS1265AB-DS1265Y: 8M Nonvolatile SRAM Data Sheet (Rev.3)