2SB1117-AZ

Active

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANS PNP

2SB1117-AZ

Active

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANS PNP

Description Specifications Series Pricing CAD Documents

Description

General part information

2SB1117 Series

A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1117-AZ

Current - Collector (Ic) (Max)	3 A
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	135
Frequency - Transition	280 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	3-SSIP
Power - Max	1 VA
Transistor Type	PNP
Vce Saturation (Max)	500 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

2SB1117 Series

Bipolar Power Transistors

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Frequency - Transition	Vce Saturation (Max)	Current - Collector Cutoff (Max)	Package / Case	Power - Max	DC Current Gain (hFE) (Min)	Operating Temperature	Transistor Type
Renesas Electronics Corporation 2SB1117-AZ	Through Hole	25 V	3 A	280 MHz	500 mV	100 nA	3-SSIP	1 VA	135	150 °C	PNP
Renesas Electronics Corporation 2SB1117-T-AZ

Pricing

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CAD

3D models and CAD resources for this part

Documents

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