IPB60R125C6ATMA1
NRNDIPB60R125C6ATMA1 INFINEON TECHNOLOGIES AG TRANSISTORS MOSFETS N-CH 600V 30A 3-PIN(2+TAB) D2PAK T/R - ARROW.COM
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IPB60R125C6ATMA1
NRNDIPB60R125C6ATMA1 INFINEON TECHNOLOGIES AG TRANSISTORS MOSFETS N-CH 600V 30A 3-PIN(2+TAB) D2PAK T/R - ARROW.COM
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB60R125C6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 96 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2127 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 219 W |
| Rds On (Max) @ Id, Vgs | 125 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB60R125 Series
CoolMOS™ C6combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.
Documents
Technical documentation and resources