JANTX1N6629US

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Microsemi Corporation

DIODE GEN PURP 880V 1.4A D-5B

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Microsemi Corporation

DIODE GEN PURP 880V 1.4A D-5B

Technical Specifications

Parameters and characteristics for this part

Specification	JANTX1N6629US

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	1.4 A
Current - Reverse Leakage @ Vr	2 µA
Grade	Military
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	E, SQ-MELF
Qualification	MIL-PRF-19500/590
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	D-5B
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	880 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Qualification	Package / Case	Technology	Mounting Type	Speed	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
Microsemi Corporation JANTX1N6629US	150 °C	-65 C	40 pF	1.4 V	D-5B	2 µA	50 ns	MIL-PRF-19500/590	E SQ-MELF	Standard	Surface Mount	200 mA 500 ns	Military	880 V	1.4 A
Microsemi Corporation JANTXV1N6629US	150 °C	-65 C	40 pF	1.4 V	D-5B	2 µA	60 ns	MIL-PRF-19500/590	E SQ-MELF	Standard	Surface Mount	200 mA 500 ns	Military	800 V	1.4 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

Diode 880 V 1.4A Surface Mount D-5B

Technical documentation and resources