Specification	IRFDC20PBF

Current - Continuous Drain (Id) (Ta)	320 mA
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	18 nC
Input Capacitance (Ciss) (Max)	350 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.3 in
Package Name	4-HVMDIP, 4-DIP
Package Width	7.62 mm
Power Dissipation (Max)	1 W
Rds On (Max)	4.4 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFDC20 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Technology	Package Name	Current - Continuous Drain (Id) (Ta)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Package Width	Package Length	Rds On (Max)	Vgs(th) (Max)	Vgs (Max)	Power Dissipation (Max)
Vishay Dale IRFDC20PBF	10 V	N-Channel	600 V	MOSFET (Metal Oxide)	4-DIP 4-HVMDIP	320 mA	Through Hole	-55 °C	150 °C	350 pF	18 nC	7.62 mm	0.3 in	4.4 Ohm	4 V	20 V	1 W

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