Zenode.ai Logo
Beta
K
DMT69M8LFV-13 - Package Image for PowerDI3333-8

DMT69M8LFV-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DMT69M8LFV-13 - Package Image for PowerDI3333-8

DMT69M8LFV-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT69M8LFV-13
Current - Continuous Drain (Id) @ 25°C45 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs33.5 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1925 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)42 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs9.5 mOhm
Supplier Device PackagePowerDI3333-8 (Type UX)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.69
10$ 0.60
100$ 0.42
500$ 0.35
1000$ 0.30
Digi-Reel® 1$ 0.69
10$ 0.60
100$ 0.42
500$ 0.35
1000$ 0.30
Tape & Reel (TR) 3000$ 0.27
6000$ 0.25
9000$ 0.24
15000$ 0.24

Description

General part information

DMT69M8LFV Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.