Specification	TK33S10N1Z,LXHQ

Current - Continuous Drain (Id) (Ta)	33 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	28 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2050 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPAK+
Power Dissipation (Max)	125 W
Qualification	AEC-Q101
Rds On (Max)	9.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

TK33S10 Series

12V - 300V MOSFETs, N-ch MOSFET, 100 V, 33 A, 0.0097 Ω@10V, DPAK+

Part	Vgs (Max)	FET Type	Qualification	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Grade	Package / Case	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Package Name	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Toshiba Semiconductor and Storage TK33S10N1Z,LXHQ	20 V	N-Channel	AEC-Q101	9.7 mOhm	10 V	Automotive	DPAK (2 Leads + Tab) SC-63 TO-252-3	125 W	MOSFET (Metal Oxide)	2050 pF	28 nC	4 V	33 A	DPAK+	Surface Mount	100 V	175 °C
Toshiba Semiconductor and Storage TK33S10N1L,LQ	20 V	N-Channel		9.7 mOhm			DPAK (2 Leads + Tab) SC-63 TO-252-3	125 W	MOSFET (Metal Oxide)	2250 pF	33 nC	2.5 V	33 A	DPAK+	Surface Mount	100 V	175 °C	10 V	4.5 V
Toshiba Semiconductor and Storage TK33S10N1Z,LQ	20 V	N-Channel	AEC-Q101	9.7 mOhm	10 V	Automotive	DPAK (2 Leads + Tab) SC-63 TO-252-3	125 W	MOSFET (Metal Oxide)	2050 pF	28 nC	4 V	33 A	DPAK+	Surface Mount	100 V	175 °C
Toshiba Semiconductor and Storage TK33S10N1L,LXHQ	20 V	N-Channel	AEC-Q101	9.7 mOhm		Automotive	DPAK (2 Leads + Tab) SC-63 TO-252-3	125 W	MOSFET (Metal Oxide)	2250 pF	33 nC	2.5 V	33 A	DPAK+	Surface Mount	100 V	175 °C	10 V	4.5 V

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