Specification	MPQ6502 TIN/LEAD

Current - Collector (Ic) (Max)	0.5 mA
Current - Collector Cutoff (Max)	30 nA
DC Current Gain (hFE) (Min)	30
Frequency - Transition	200 MHz
Mounting Type	Through Hole
NPN Count	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-65 °C
Package Length	0.3 in
Package Name	14-DIP, TO-116
Package Width	7.62 mm
PNP Count	2
Power - Max	650 mW
Transistor Type	NPN, PNP
Vce Saturation (Max)	1.4 V
Voltage - Collector Emitter Breakdown (Max)	30 V

MPQ6502 Series

Part	Current - Collector Cutoff (Max)	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Transistor Type	PNP Count	NPN Count	DC Current Gain (hFE) (Min)	Current - Collector (Ic) (Max)	Mounting Type	Vce Saturation (Max)	Package Length	Package Name	Package Width	Power - Max	Operating Temperature (Max)	Operating Temperature (Min)
Central Semiconductor Corp MPQ6502 TIN/LEAD	30 nA	30 V	200 MHz	NPN PNP	2	2	30	0.5 mA	Through Hole	1.4 V	0.3 in	14-DIP TO-116	7.62 mm	650 mW	150 °C	-65 °C

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