BS250KL-TR1-E3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET P-CH 60V 270MA TO92-18RM

Search across all available documentation for this part.

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET P-CH 60V 270MA TO92-18RM

Technical Specifications

Parameters and characteristics for this part

Specification	BS250KL-TR1-E3

Current - Continuous Drain (Id) @ 25°C	270 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Rds On (Max) @ Id, Vgs	6 Ohm
Supplier Device Package	TO-92-18RM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division BS250KL-TR1-E3	60 V	20 V	Through Hole	P-Channel	TO-92-18RM	6 Ohm	4.5 V 10 V	3 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	270 mA	TO-226-3 TO-92-3	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 270mA (Ta) 800mW (Ta) Through Hole TO-92-18RM

Technical documentation and resources