IPA075N15N3GXKSA1

Active

Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; TO-220 FULLPAK PACKAGE; 7.5 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

IPA075N15N3GXKSA1

Active

Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; TO-220 FULLPAK PACKAGE; 7.5 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPA075N15N3GXKSA1

Current - Continuous Drain (Id) @ 25°C	43 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds	7280 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	39 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPA075 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case
Infineon Technologies IPA075N15N3GXKSA1	8 V 10 V	150 V	93 nC	Through Hole	7280 pF	N-Channel	PG-TO220-FP	MOSFET (Metal Oxide)	39 W	7.5 mOhm	-55 °C	175 ░C	43 A	4 V	20 V	TO-220-3 Full Pack

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.81
		10	$ 4.60
		100	$ 3.34
		500	$ 2.86
Newark	Each	1	$ 7.89
		10	$ 6.87
		25	$ 6.53
		50	$ 6.20
		100	$ 5.85
		250	$ 5.61
		500	$ 5.37

Description

General part information

IPA075 Series

The 150 V OptiMOS™ achieves a reduction in RDS(on)of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Documents

Technical documentation and resources