S40QR

Active

GeneSiC Semiconductor

DIODE GEN PURP REV 1.2KV 40A DO5

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

DIODE GEN PURP REV 1.2KV 40A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	S40QR

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	190 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.1 V

DIODE GEN PURP REV 1.2KV 40A DO5

Part	Package / Case	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Technology	Mounting Type	Supplier Device Package	Current - Reverse Leakage @ Vr
GeneSiC Semiconductor S40QR	DO-203AB, DO-5, Stud	Standard Recovery >500ns	200 mA	1.2 kV	40 A	190 °C	-65 C	1.1 V	Reverse Polarity, Standard	Chassis, Stud Mount	DO-5	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	800	$ 6.38

General part information

Diode 1200 V 40A Chassis, Stud Mount DO-5

Technical documentation and resources